Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon

by Gogotsi, Y., Zhou, G. H., Ku, S. S. and Cetinkunt, S.
Reference:
Y. Gogotsi, G. H. Zhou, S. S. Ku, and S. Cetinkunt, "Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon", Semiconductor Science and Technology, vol. 16, no. 5, 2001, pp. 345.
Bibtex Entry:
@article{56,
   author = {Gogotsi, Y. and Zhou, G. H. and Ku, S. S. and Cetinkunt, S.},
   title = {Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon},
   journal = {Semiconductor Science and Technology},
   volume = {16},
   number = {5},
   pages = {345},
   ISSN = {0268-1242},
   DOI = {10.1088/0268-1242/16/5/311},
   year = {2001},
   date= {05/01}
   type = {Journal Article},
   url = https://nano.materials.drexel.edu/wp-content/papercite-data/pdf/56.pdf
}

Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon