by Brill, G., Smith, D. J., Chandrasekhar, D., Gogotsi, Y., Prociuk, A. and Sivananthan, S.
Reference:
G. Brill, D. J. Smith, D. Chandrasekhar, Y. Gogotsi, A. Prociuk, and S. Sivananthan, "Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy and TEM", Journal of Crystal Growth, vol. 201, 1999, pp. 538.
Bibtex Entry:
@article{37,
   author = {Brill, G. and Smith, D. J. and Chandrasekhar, D. and Gogotsi, Y. and Prociuk, A. and Sivananthan, S.},
   title = {Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy and TEM},
   journal = {Journal of Crystal Growth},
   volume = {201},
   pages = {538},
   ISSN = {0022-0248},
   DOI = {10.1016/s0022-0248(98)01410-9},
   year = {1999},
   date= {05/01}
   type = {Journal Article},
   url = https://nano.materials.drexel.edu/wp-content/papercite-data/pdf/37.pdf
}

Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy and TEM